High-<i>κ</i> van der Waals Oxide MoO<sub>3</sub> as Efficient Gate Dielectric for MoS<sub>2</sub> Field-Effect Transistors

High-<i>κ</i> van der Waals Oxide MoO<sub>3</sub> as Efficient Gate Dielectric for MoS<sub>2</sub> Field-Effect Transistors

Two-dimensional van der Waals crystals (2D vdW) are recognized as one of the potential materials to solve the physical limits caused by size scaling. Here, vdW metal oxide MoO<sub>3</sub> is applied with the gate dielectric in a 2D field-effect transistor (FET). Due to its high dielectri...

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Bibliographic Details
Main Authors: Junfan Wang, Haojie Lai, Xiaoli Huang, Junjie Liu, Yueheng Lu, Pengyi Liu, Weiguang Xie
Format: Article
Language:English
Published: MDPI AG 2022-08-01
Series:Materials
Subjects:
MoS<sub>2</sub>
MoO<sub>3</sub>
FET
photodetector
field effect transistor
gate dielectric
Online Access:https://www.mdpi.com/1996-1944/15/17/5859

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