The Effect of Multi-Layer Stacking Sequence of TiO<sub>x</sub> Active Layers on the Resistive-Switching Characteristics of Memristor Devices

The Effect of Multi-Layer Stacking Sequence of TiO<sub>x</sub> Active Layers on the Resistive-Switching Characteristics of Memristor Devices

The oxygen vacancies in the TiO<sub>x</sub> active layer play the key role in determining the electrical characteristics of TiO<sub>x</sub>&#8722;based memristors such as resistive-switching behaviour. In this paper, we investigated the effect of a multi-layer stacking se...

Full description

Bibliographic Details
Main Authors: Minho Kim, Kungsang Yoo, Seong-Pil Jeon, Sung Kyu Park, Yong-Hoon Kim
Format: Article
Language:English
Published: MDPI AG 2020-01-01
Series:Micromachines
Subjects:
memristors
tio<sub>x</sub>
stacking sequence
oxygen vacancy
resistive switching behaviour
Online Access:https://www.mdpi.com/2072-666X/11/2/154

Internet

https://www.mdpi.com/2072-666X/11/2/154

Similar Items