The Effect of Multi-Layer Stacking Sequence of TiO<sub>x</sub> Active Layers on the Resistive-Switching Characteristics of Memristor Devices

The Effect of Multi-Layer Stacking Sequence of TiO<sub>x</sub> Active Layers on the Resistive-Switching Characteristics of Memristor Devices

The oxygen vacancies in the TiO<sub>x</sub> active layer play the key role in determining the electrical characteristics of TiO<sub>x</sub>&#8722;based memristors such as resistive-switching behaviour. In this paper, we investigated the effect of a multi-layer stacking se...

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Detalhes bibliográficos
Principais autores: Minho Kim, Kungsang Yoo, Seong-Pil Jeon, Sung Kyu Park, Yong-Hoon Kim
Formato: Artigo
Idioma:English
Publicado em: MDPI AG 2020-01-01
coleção:Micromachines
Assuntos:
memristors
tio<sub>x</sub>
stacking sequence
oxygen vacancy
resistive switching behaviour
Acesso em linha:https://www.mdpi.com/2072-666X/11/2/154

Internet

https://www.mdpi.com/2072-666X/11/2/154

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