Understanding and Hindering the Electron Leakage in Green InP Quantum‐Dot Light‐Emitting Diodes

Understanding and Hindering the Electron Leakage in Green InP Quantum‐Dot Light‐Emitting Diodes

Indium phosphide (InP) quantum‐dot light‐emitting diodes (QLEDs) are considered as one of the most promising candidates for emerging displays owing to their good luminous performance and environmentally friendly properties. The operation of green InP QLEDs relies on the radiative recombination of el...

Full description

Bibliographic Details
Main Authors: Tianqi Zhang, Fangqing Zhao, Pai Liu, Yangzhi Tan, Xiangtian Xiao, Zhaojin Wang, Weigao Wang, Dan Wu, Xiao Wei Sun, Jianhua Hao, Guichuan Xing, Kai Wang
Format: Article
Language:English
Published: Wiley-VCH 2023-11-01
Series:Advanced Photonics Research
Subjects:
carrier injection balance
electron leakage
indium phosphide
quantum-dot light-emitting diodes (QLEDs)
Online Access:https://doi.org/10.1002/adpr.202300146

Internet

https://doi.org/10.1002/adpr.202300146

Similar Items