An Investigation of Electrical Properties of (p-n) Porous Silicon Layer
In this work, we studied the electrical properties of (p-n) porous silicon layer under different etching time. The (p-n) porous silicon layer prepared by photo-electrochemical etching process. The dark I-V characteristics; give us rectification ratio with wide range as a function to etching time. A...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Unviversity of Technology- Iraq
2013-05-01
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| Series: | Engineering and Technology Journal |
| Subjects: | |
| Online Access: | https://etj.uotechnology.edu.iq/article_84339_c7579c4fa96c00ff7be6eb494d8e9fdc.pdf |