Photovoltaic Properties of CdS/Si Heterojunction Prepared by DC Plasma Sputtering Technique

CdS/Si heterojunction has been fabricated by dc plasma sputtering technique. Polycrystalline CdS films have been prepared by dc plasma sputtering technique on Si substrate. The current – voltage under illumination showed that the photocurrent increases with increasing incident illumination intensity...

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Bibliographic Details
Main Authors: Mohammed K. Khalaf, Sabah Habeeb Sabeeh, Azhar K. Sadkhan
Format: Article
Language:English
Published: Unviversity of Technology- Iraq 2016-02-01
Series:Engineering and Technology Journal
Subjects:
Online Access:https://etj.uotechnology.edu.iq/article_112663_44ebace2e945b50ebd1266411b850bca.pdf