Photovoltaic Properties of CdS/Si Heterojunction Prepared by DC Plasma Sputtering Technique
CdS/Si heterojunction has been fabricated by dc plasma sputtering technique. Polycrystalline CdS films have been prepared by dc plasma sputtering technique on Si substrate. The current – voltage under illumination showed that the photocurrent increases with increasing incident illumination intensity...
Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
Unviversity of Technology- Iraq
2016-02-01
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Series: | Engineering and Technology Journal |
Subjects: | |
Online Access: | https://etj.uotechnology.edu.iq/article_112663_44ebace2e945b50ebd1266411b850bca.pdf |
Summary: | CdS/Si heterojunction has been fabricated by dc plasma sputtering technique. Polycrystalline CdS films have been prepared by dc plasma sputtering technique on Si substrate. The current – voltage under illumination showed that the photocurrent increases with increasing incident illumination intensity for CdS/Si heterojunction. The CdS thin films have been sputtered under vacuum of (9×10-2 ,8×10-2, 6×10-2,5×10-2) mbar, theheterojunction has better photovoltaic properties. The open circuit voltage (Voc) and the short circuit current (Isc)were found to vary with working discharge pressure, and the efficiency is 6.72% at 50.3 mW/cm2. |
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ISSN: | 1681-6900 2412-0758 |