Photovoltaic Properties of CdS/Si Heterojunction Prepared by DC Plasma Sputtering Technique

CdS/Si heterojunction has been fabricated by dc plasma sputtering technique. Polycrystalline CdS films have been prepared by dc plasma sputtering technique on Si substrate. The current – voltage under illumination showed that the photocurrent increases with increasing incident illumination intensity...

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Bibliographic Details
Main Authors: Mohammed K. Khalaf, Sabah Habeeb Sabeeh, Azhar K. Sadkhan
Format: Article
Language:English
Published: Unviversity of Technology- Iraq 2016-02-01
Series:Engineering and Technology Journal
Subjects:
Online Access:https://etj.uotechnology.edu.iq/article_112663_44ebace2e945b50ebd1266411b850bca.pdf
Description
Summary:CdS/Si heterojunction has been fabricated by dc plasma sputtering technique. Polycrystalline CdS films have been prepared by dc plasma sputtering technique on Si substrate. The current – voltage under illumination showed that the photocurrent increases with increasing incident illumination intensity for CdS/Si heterojunction. The CdS thin films have been sputtered under vacuum of (9×10-2 ,8×10-2, 6×10-2,5×10-2) mbar, theheterojunction has better photovoltaic properties. The open circuit voltage (Voc) and the short circuit current (Isc)were found to vary with working discharge pressure, and the efficiency is 6.72% at 50.3 mW/cm2.
ISSN:1681-6900
2412-0758