Photovoltaic Properties of CdS/Si Heterojunction Prepared by DC Plasma Sputtering Technique
CdS/Si heterojunction has been fabricated by dc plasma sputtering technique. Polycrystalline CdS films have been prepared by dc plasma sputtering technique on Si substrate. The current – voltage under illumination showed that the photocurrent increases with increasing incident illumination intensity...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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Unviversity of Technology- Iraq
2016-02-01
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| Series: | Engineering and Technology Journal |
| Subjects: | |
| Online Access: | https://etj.uotechnology.edu.iq/article_112663_44ebace2e945b50ebd1266411b850bca.pdf |
| _version_ | 1797325951171821568 |
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| author | Mohammed K. Khalaf Sabah Habeeb Sabeeh Azhar K. Sadkhan |
| author_facet | Mohammed K. Khalaf Sabah Habeeb Sabeeh Azhar K. Sadkhan |
| author_sort | Mohammed K. Khalaf |
| collection | DOAJ |
| description | CdS/Si heterojunction has been fabricated by dc plasma sputtering technique. Polycrystalline CdS films have been prepared by dc plasma sputtering technique on Si substrate. The current – voltage under illumination showed that the photocurrent increases with increasing incident illumination intensity for CdS/Si heterojunction. The CdS thin films have been sputtered under vacuum of (9×10-2 ,8×10-2, 6×10-2,5×10-2) mbar, theheterojunction has better photovoltaic properties. The open circuit voltage (Voc) and the short circuit current (Isc)were found to vary with working discharge pressure, and the efficiency is 6.72% at 50.3 mW/cm2. |
| first_indexed | 2024-03-08T06:16:39Z |
| format | Article |
| id | doaj.art-9fa07faa1a3a4a89b85985e9e3b5ed2c |
| institution | Directory Open Access Journal |
| issn | 1681-6900 2412-0758 |
| language | English |
| last_indexed | 2024-03-08T06:16:39Z |
| publishDate | 2016-02-01 |
| publisher | Unviversity of Technology- Iraq |
| record_format | Article |
| series | Engineering and Technology Journal |
| spelling | doaj.art-9fa07faa1a3a4a89b85985e9e3b5ed2c2024-02-04T17:27:23ZengUnviversity of Technology- IraqEngineering and Technology Journal1681-69002412-07582016-02-01342B31131610.30684/etj.34.2B.14112663Photovoltaic Properties of CdS/Si Heterojunction Prepared by DC Plasma Sputtering TechniqueMohammed K. KhalafSabah Habeeb SabeehAzhar K. SadkhanCdS/Si heterojunction has been fabricated by dc plasma sputtering technique. Polycrystalline CdS films have been prepared by dc plasma sputtering technique on Si substrate. The current – voltage under illumination showed that the photocurrent increases with increasing incident illumination intensity for CdS/Si heterojunction. The CdS thin films have been sputtered under vacuum of (9×10-2 ,8×10-2, 6×10-2,5×10-2) mbar, theheterojunction has better photovoltaic properties. The open circuit voltage (Voc) and the short circuit current (Isc)were found to vary with working discharge pressure, and the efficiency is 6.72% at 50.3 mW/cm2.https://etj.uotechnology.edu.iq/article_112663_44ebace2e945b50ebd1266411b850bca.pdfsolar cellcadmium sulphideplasmadc sputtering |
| spellingShingle | Mohammed K. Khalaf Sabah Habeeb Sabeeh Azhar K. Sadkhan Photovoltaic Properties of CdS/Si Heterojunction Prepared by DC Plasma Sputtering Technique Engineering and Technology Journal solar cell cadmium sulphide plasma dc sputtering |
| title | Photovoltaic Properties of CdS/Si Heterojunction Prepared by DC Plasma Sputtering Technique |
| title_full | Photovoltaic Properties of CdS/Si Heterojunction Prepared by DC Plasma Sputtering Technique |
| title_fullStr | Photovoltaic Properties of CdS/Si Heterojunction Prepared by DC Plasma Sputtering Technique |
| title_full_unstemmed | Photovoltaic Properties of CdS/Si Heterojunction Prepared by DC Plasma Sputtering Technique |
| title_short | Photovoltaic Properties of CdS/Si Heterojunction Prepared by DC Plasma Sputtering Technique |
| title_sort | photovoltaic properties of cds si heterojunction prepared by dc plasma sputtering technique |
| topic | solar cell cadmium sulphide plasma dc sputtering |
| url | https://etj.uotechnology.edu.iq/article_112663_44ebace2e945b50ebd1266411b850bca.pdf |
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