Investigation of material removal characteristics of Si (100) wafer during linear field atmospheric-pressure plasma etching

Atmospheric-pressure (AP) plasma etching provides an alternative method for mechanical grinding to realize wafer thinning of Si wafer. It can avoid the damages and micro-cracks that would be introduced by mechanical stress during the grinding process. In this study, the material removal characterist...

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Bibliographic Details
Main Authors: Weijia Guo, Senthil Kumar A., Peng Xu
Format: Article
Language:English
Published: AIP Publishing LLC 2020-12-01
Series:Nanotechnology and Precision Engineering
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2589554020300295