Bandgap engineering of high mobility two-dimensional semiconductors toward optoelectronic devices

Bandgap engineering of high mobility two-dimensional semiconductors toward optoelectronic devices

Over the last few years, great advances have been achieved in exploration of high-mobility two-dimensional (2D) semiconductors such as metal chalcogenide InSe and noble-transition-metal dichalcogenide PdSe2. These materials are competitive candidates for constructing next-generation optoelectronic d...

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Bibliographic Details
Main Authors: Qiaoyan Hao, Peng Li, Jidong Liu, Jiarui Huang, Wenjing Zhang
Format: Article
Language:English
Published: Elsevier 2023-05-01
Series:Journal of Materiomics
Subjects:
High mobility
2D semiconductors
Bandgap engineering
Alloying
Heterostructure
Online Access:http://www.sciencedirect.com/science/article/pii/S235284782200154X

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http://www.sciencedirect.com/science/article/pii/S235284782200154X

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