Influence Study of Etching Time for Porous Silicon on Morphological, Optical, Electrical and Spectral Responsivity Properties
In this investigation, n-type (100) silicon wafers with a thickness of 600 ± 25 μm and resistance of 0.1-100 μΩ were used to manufacture porous silicon. With the aid of hydrofluoric acid (HF) with a 20% concentration, a current density of 20 mA/cm2, and various experimental drilling times of 5, 15,...
| Main Authors: | , , |
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| Format: | Article |
| Language: | Arabic |
| Published: |
Al-Mustansiriyah University
2023-06-01
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| Series: | Mustansiriyah Journal of Science |
| Subjects: | |
| Online Access: | https://mjs.uomustansiriyah.edu.iq/index.php/MJS/article/view/1223 |