On the structural evolutionary behavior of the CdTe/HgCdTe interface during the annealing process

In this study, secondary ion mass spectrometry and a semiconductor parameter analyzer were used to study and analyze the component interdiffusion at the CdTe/HgCdTe interface before and after annealing, as well as the effect of the formation of a gradient bandgap layer from annealing on the electric...

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Bibliographic Details
Main Authors: Jiyuan Chen, Yang Lin, Lu Li, Xiao Wang, Wei Dong, Li Liu, Zhentao Yuan, Xiaoying Cui, Shouzhang Yuan
Format: Article
Language:English
Published: Elsevier 2024-01-01
Series:Journal of Materials Research and Technology
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2238785423032490