On the structural evolutionary behavior of the CdTe/HgCdTe interface during the annealing process
In this study, secondary ion mass spectrometry and a semiconductor parameter analyzer were used to study and analyze the component interdiffusion at the CdTe/HgCdTe interface before and after annealing, as well as the effect of the formation of a gradient bandgap layer from annealing on the electric...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2024-01-01
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| Series: | Journal of Materials Research and Technology |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2238785423032490 |
| _version_ | 1827368290141339648 |
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| author | Jiyuan Chen Yang Lin Lu Li Xiao Wang Wei Dong Li Liu Zhentao Yuan Xiaoying Cui Shouzhang Yuan |
| author_facet | Jiyuan Chen Yang Lin Lu Li Xiao Wang Wei Dong Li Liu Zhentao Yuan Xiaoying Cui Shouzhang Yuan |
| author_sort | Jiyuan Chen |
| collection | DOAJ |
| description | In this study, secondary ion mass spectrometry and a semiconductor parameter analyzer were used to study and analyze the component interdiffusion at the CdTe/HgCdTe interface before and after annealing, as well as the effect of the formation of a gradient bandgap layer from annealing on the electrical properties of the metal–insulator-semiconductor (MIS) structure. The site-direction relationship of the contracted crystals at the CdTe/HgCdTe interface was revealed by transmission electron microscopy, and it was found that the stacking dislocations in the CdTe layer were significantly reduced after annealing and that the Hg atoms diffused into the CdTe layer through the high-temperature annealing and occupied the lattice positions of the Cd atoms, thus forming the HgCdTe structure, which formed a contracted-crystalline structure with the CdTe substrate. Molecular dynamics was applied to simulate the specific atomic diffusion behavior at different temperatures and different times during the high temperature annealing process, and the above experimental results were verified by a research note on the variation of the diffusion phenomena during the process. |
| first_indexed | 2024-03-08T09:29:03Z |
| format | Article |
| id | doaj.art-a0c70a305a29429e963dfbed8f04801a |
| institution | Directory Open Access Journal |
| issn | 2238-7854 |
| language | English |
| last_indexed | 2024-03-08T09:29:03Z |
| publishDate | 2024-01-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Materials Research and Technology |
| spelling | doaj.art-a0c70a305a29429e963dfbed8f04801a2024-01-31T05:43:57ZengElsevierJournal of Materials Research and Technology2238-78542024-01-012831753185On the structural evolutionary behavior of the CdTe/HgCdTe interface during the annealing processJiyuan Chen0Yang Lin1Lu Li2Xiao Wang3Wei Dong4Li Liu5Zhentao Yuan6Xiaoying Cui7Shouzhang Yuan8Faculty of Material Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, ChinaKunming Institute of Physics, Kunming, 650221, ChinaFaculty of Material Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, China; Research Center for Analysis and Measurement, Kunming University of Science and Technology, Kunming, 650093, China; Corresponding author. Faculty of Material Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, China.Faculty of Material Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, ChinaKunming Institute of Physics, Kunming, 650221, ChinaKunming Institute of Physics, Kunming, 650221, ChinaFaculty of Material Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, ChinaFaculty of Material Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, China; Research Center for Analysis and Measurement, Kunming University of Science and Technology, Kunming, 650093, ChinaKunming Institute of Physics, Kunming, 650221, China; Corresponding author.In this study, secondary ion mass spectrometry and a semiconductor parameter analyzer were used to study and analyze the component interdiffusion at the CdTe/HgCdTe interface before and after annealing, as well as the effect of the formation of a gradient bandgap layer from annealing on the electrical properties of the metal–insulator-semiconductor (MIS) structure. The site-direction relationship of the contracted crystals at the CdTe/HgCdTe interface was revealed by transmission electron microscopy, and it was found that the stacking dislocations in the CdTe layer were significantly reduced after annealing and that the Hg atoms diffused into the CdTe layer through the high-temperature annealing and occupied the lattice positions of the Cd atoms, thus forming the HgCdTe structure, which formed a contracted-crystalline structure with the CdTe substrate. Molecular dynamics was applied to simulate the specific atomic diffusion behavior at different temperatures and different times during the high temperature annealing process, and the above experimental results were verified by a research note on the variation of the diffusion phenomena during the process.http://www.sciencedirect.com/science/article/pii/S2238785423032490CdTe/HgCdTeInterfaceDiffusionAnnealingFilms |
| spellingShingle | Jiyuan Chen Yang Lin Lu Li Xiao Wang Wei Dong Li Liu Zhentao Yuan Xiaoying Cui Shouzhang Yuan On the structural evolutionary behavior of the CdTe/HgCdTe interface during the annealing process Journal of Materials Research and Technology CdTe/HgCdTe Interface Diffusion Annealing Films |
| title | On the structural evolutionary behavior of the CdTe/HgCdTe interface during the annealing process |
| title_full | On the structural evolutionary behavior of the CdTe/HgCdTe interface during the annealing process |
| title_fullStr | On the structural evolutionary behavior of the CdTe/HgCdTe interface during the annealing process |
| title_full_unstemmed | On the structural evolutionary behavior of the CdTe/HgCdTe interface during the annealing process |
| title_short | On the structural evolutionary behavior of the CdTe/HgCdTe interface during the annealing process |
| title_sort | on the structural evolutionary behavior of the cdte hgcdte interface during the annealing process |
| topic | CdTe/HgCdTe Interface Diffusion Annealing Films |
| url | http://www.sciencedirect.com/science/article/pii/S2238785423032490 |
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