Polarized Coulomb field scattering in LaAlO3/SrTiO3 heterojunction field-effect transistors
LaAlO3/SrTiO3 heterojunction field-effect transistors (HFETs) were fabricated. Using a combination of measured current–voltage (I–V) output curves and gate-source capacitance–voltage (C–V) characteristic curves for the fabricated LaAlO3/SrTiO3 HFETs, and considering scattering mechanisms for longitu...
Main Authors: | , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2024-01-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/5.0188217 |