Polarized Coulomb field scattering in LaAlO3/SrTiO3 heterojunction field-effect transistors
LaAlO3/SrTiO3 heterojunction field-effect transistors (HFETs) were fabricated. Using a combination of measured current–voltage (I–V) output curves and gate-source capacitance–voltage (C–V) characteristic curves for the fabricated LaAlO3/SrTiO3 HFETs, and considering scattering mechanisms for longitu...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2024-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0188217 |
| _version_ | 1827363172128915456 |
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| author | Baocai Fan Yichen Liu Chen Fu Zhaojun Lin Sean Li |
| author_facet | Baocai Fan Yichen Liu Chen Fu Zhaojun Lin Sean Li |
| author_sort | Baocai Fan |
| collection | DOAJ |
| description | LaAlO3/SrTiO3 heterojunction field-effect transistors (HFETs) were fabricated. Using a combination of measured current–voltage (I–V) output curves and gate-source capacitance–voltage (C–V) characteristic curves for the fabricated LaAlO3/SrTiO3 HFETs, and considering scattering mechanisms for longitudinal optical phonon, interface rough, electron-electron (E-E), acoustic phonon, and polarized Coulomb field (PCF), the channel electron mobility of LaAlO3/SrTiO3 HFETs has been calculated and analyzed. The results showed that PCF scattering is a significant carrier scattering mechanism in LaAlO3/SrTiO3 HFETs. The heterostructure of the LaAlO3/SrTiO3 system has strong polarization characteristics. This paper is the first to demonstrate that PCF scattering is a significant carrier scattering mechanism in LaAlO3/SrTiO3 HFETs, following GaN HFETs, thus demonstrating that LaAlO3/SrTiO3 HFETs also have PCF scattering effect. |
| first_indexed | 2024-03-08T07:43:08Z |
| format | Article |
| id | doaj.art-a0f6825740324db69e12264668dd7c1e |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-03-08T07:43:08Z |
| publishDate | 2024-01-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-a0f6825740324db69e12264668dd7c1e2024-02-02T16:46:06ZengAIP Publishing LLCAIP Advances2158-32262024-01-01141015054015054-510.1063/5.0188217Polarized Coulomb field scattering in LaAlO3/SrTiO3 heterojunction field-effect transistorsBaocai Fan0Yichen Liu1Chen Fu2Zhaojun Lin3Sean Li4School of Integrated Circuits, Shandong University, Jinan 250101, ChinaUNSW Materials and Manufacturing Futures Institute, School of Material Science and Engineering, The University of New South Wales, Kensington, New South Wales 2052, AustraliaSchool of Information Science and Electrical Engineering, Shandong Jiaotong University, Jinan 250357, ChinaSchool of Integrated Circuits, Shandong University, Jinan 250101, ChinaUNSW Materials and Manufacturing Futures Institute, School of Material Science and Engineering, The University of New South Wales, Kensington, New South Wales 2052, AustraliaLaAlO3/SrTiO3 heterojunction field-effect transistors (HFETs) were fabricated. Using a combination of measured current–voltage (I–V) output curves and gate-source capacitance–voltage (C–V) characteristic curves for the fabricated LaAlO3/SrTiO3 HFETs, and considering scattering mechanisms for longitudinal optical phonon, interface rough, electron-electron (E-E), acoustic phonon, and polarized Coulomb field (PCF), the channel electron mobility of LaAlO3/SrTiO3 HFETs has been calculated and analyzed. The results showed that PCF scattering is a significant carrier scattering mechanism in LaAlO3/SrTiO3 HFETs. The heterostructure of the LaAlO3/SrTiO3 system has strong polarization characteristics. This paper is the first to demonstrate that PCF scattering is a significant carrier scattering mechanism in LaAlO3/SrTiO3 HFETs, following GaN HFETs, thus demonstrating that LaAlO3/SrTiO3 HFETs also have PCF scattering effect.http://dx.doi.org/10.1063/5.0188217 |
| spellingShingle | Baocai Fan Yichen Liu Chen Fu Zhaojun Lin Sean Li Polarized Coulomb field scattering in LaAlO3/SrTiO3 heterojunction field-effect transistors AIP Advances |
| title | Polarized Coulomb field scattering in LaAlO3/SrTiO3 heterojunction field-effect transistors |
| title_full | Polarized Coulomb field scattering in LaAlO3/SrTiO3 heterojunction field-effect transistors |
| title_fullStr | Polarized Coulomb field scattering in LaAlO3/SrTiO3 heterojunction field-effect transistors |
| title_full_unstemmed | Polarized Coulomb field scattering in LaAlO3/SrTiO3 heterojunction field-effect transistors |
| title_short | Polarized Coulomb field scattering in LaAlO3/SrTiO3 heterojunction field-effect transistors |
| title_sort | polarized coulomb field scattering in laalo3 srtio3 heterojunction field effect transistors |
| url | http://dx.doi.org/10.1063/5.0188217 |
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