Polarized Coulomb field scattering in LaAlO3/SrTiO3 heterojunction field-effect transistors

Polarized Coulomb field scattering in LaAlO3/SrTiO3 heterojunction field-effect transistors

LaAlO3/SrTiO3 heterojunction field-effect transistors (HFETs) were fabricated. Using a combination of measured current–voltage (I–V) output curves and gate-source capacitance–voltage (C–V) characteristic curves for the fabricated LaAlO3/SrTiO3 HFETs, and considering scattering mechanisms for longitu...

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Bibliographic Details
Main Authors: Baocai Fan, Yichen Liu, Chen Fu, Zhaojun Lin, Sean Li
Format: Article
Language:English
Published: AIP Publishing LLC 2024-01-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0188217

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