Sequential directional deposition of one-sided (In,Ga)N shells on GaN nanowires by molecular beam epitaxy
Capitalizing on the directed nature of the atomic fluxes in molecular beam epitaxy, we propose and demonstrate the sequential directional deposition of lateral (In,Ga)N shells on GaN nanowires. In this approach, a sub-monolayer thickness of each constituent atomic species, i.e., Ga, In, and N, is de...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-09-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0168786 |