Illumination Induced Negative Differential Resistance in InGaAs Avalanche Photodiode

Illumination Induced Negative Differential Resistance in InGaAs Avalanche Photodiode

This work presents a novel InGaAs/InP avalanche photodiode, fabricated in the separate absorption, grading, charge, and multiplication configuration operated at non-cryogenic conditions under low-frequency ramp gating. An optimized three stage InP multiplication layer of <inline-formula> <t...

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Bibliographic Details
Main Authors: Afshan Khaliq, Xinyi Zhou, Hong-Yu Chai, Munir Ali, Hao Wu, Oussama Gassab, Hong Liu, Duo Xiao, Xiao-Guang Yang, Sichao Du
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Access
Subjects:
Adaptive optics
avalanche photodiode
LiDAR
linear mode
negative differential resistance
quenching
Online Access:https://ieeexplore.ieee.org/document/10487920/

Internet

https://ieeexplore.ieee.org/document/10487920/

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