Illumination Induced Negative Differential Resistance in InGaAs Avalanche Photodiode
This work presents a novel InGaAs/InP avalanche photodiode, fabricated in the separate absorption, grading, charge, and multiplication configuration operated at non-cryogenic conditions under low-frequency ramp gating. An optimized three stage InP multiplication layer of <inline-formula> <t...
| Үндсэн зохиолчид: | , , , , , , , , , |
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| Формат: | Өгүүллэг |
| Хэл сонгох: | English |
| Хэвлэсэн: |
IEEE
2024-01-01
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| Цуврал: | IEEE Access |
| Нөхцлүүд: | |
| Онлайн хандалт: | https://ieeexplore.ieee.org/document/10487920/ |