Ultrathin Al‐Assisted Al2O3 Passivation Layer for High‐Stability Tungsten Diselenide Transistors and Their Ambipolar Inverter
Abstract 2D transition metal dichalcogenides (TMDs) have recently received significant attention owing to their superior electrical, optical, and mechanical properties. However, most previous research on TMDs has not focused on their stability against bias and illumination stress. Here, high‐stabili...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2022-04-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202101012 |