All-Sputtering, High-Transparency, Good-Stability Coplanar Top-Gate Thin Film Transistors
In this work, transparent, stable coplanar top-gate thin film transistors (TFTs) with an active layer of neodymium-doped indium oxide and zinc oxide (Nd-IZO) were successfully fabricated on a glass substrate by all sputtering processes. The devices with a post-annealing temperature of 400 °C...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2018-12-01
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| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | http://www.mdpi.com/2076-3417/9/1/83 |