All-Sputtering, High-Transparency, Good-Stability Coplanar Top-Gate Thin Film Transistors
In this work, transparent, stable coplanar top-gate thin film transistors (TFTs) with an active layer of neodymium-doped indium oxide and zinc oxide (Nd-IZO) were successfully fabricated on a glass substrate by all sputtering processes. The devices with a post-annealing temperature of 400 °C...
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MDPI AG
2018-12-01
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| Series: | Applied Sciences |
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| Online Access: | http://www.mdpi.com/2076-3417/9/1/83 |
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| author | Jianqiu Chen Xiuqi Huang Qunjie Li Zhiqiang Fang Honglong Ning Ruiqiang Tao Hongfu Liang Yicong Zhou Rihui Yao Junbiao Peng |
| author_facet | Jianqiu Chen Xiuqi Huang Qunjie Li Zhiqiang Fang Honglong Ning Ruiqiang Tao Hongfu Liang Yicong Zhou Rihui Yao Junbiao Peng |
| author_sort | Jianqiu Chen |
| collection | DOAJ |
| description | In this work, transparent, stable coplanar top-gate thin film transistors (TFTs) with an active layer of neodymium-doped indium oxide and zinc oxide (Nd-IZO) were successfully fabricated on a glass substrate by all sputtering processes. The devices with a post-annealing temperature of 400 °C exhibited good electrical performances with a saturation mobility (μsat) of 4.25 cm2·V−1·S−1, Ion/Ioff ratio about 106, Vth of −0.97 V and SS about 0.34 V/decade. Furthermore, the devices exhibited excellent negative and positive bias stability (NBS, PBS) of only a ΔVth shift of about −0.04 V and 0.05 V after 1 h, respectively. In addition, the devices showed high transparency about 96% over the visible-light region of 400–700 nm, which indicates a great potential in transparent displays. |
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| format | Article |
| id | doaj.art-a15e282ce21f4fafad6e2f89bd0daffd |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-12-12T21:38:14Z |
| publishDate | 2018-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-a15e282ce21f4fafad6e2f89bd0daffd2022-12-22T00:11:07ZengMDPI AGApplied Sciences2076-34172018-12-01918310.3390/app9010083app9010083All-Sputtering, High-Transparency, Good-Stability Coplanar Top-Gate Thin Film TransistorsJianqiu Chen0Xiuqi Huang1Qunjie Li2Zhiqiang Fang3Honglong Ning4Ruiqiang Tao5Hongfu Liang6Yicong Zhou7Rihui Yao8Junbiao Peng9Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaVisionox Technology Inc., Gu’an New Industry Demonstration Zone, Langfang 065500, ChinaInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaState Key Laboratory of Pulp and Paper Engineering, South China University of Technology, Guangzhou 510640, ChinaInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaIn this work, transparent, stable coplanar top-gate thin film transistors (TFTs) with an active layer of neodymium-doped indium oxide and zinc oxide (Nd-IZO) were successfully fabricated on a glass substrate by all sputtering processes. The devices with a post-annealing temperature of 400 °C exhibited good electrical performances with a saturation mobility (μsat) of 4.25 cm2·V−1·S−1, Ion/Ioff ratio about 106, Vth of −0.97 V and SS about 0.34 V/decade. Furthermore, the devices exhibited excellent negative and positive bias stability (NBS, PBS) of only a ΔVth shift of about −0.04 V and 0.05 V after 1 h, respectively. In addition, the devices showed high transparency about 96% over the visible-light region of 400–700 nm, which indicates a great potential in transparent displays.http://www.mdpi.com/2076-3417/9/1/83thin film transistorsstabilitytop-gateNd-IZO |
| spellingShingle | Jianqiu Chen Xiuqi Huang Qunjie Li Zhiqiang Fang Honglong Ning Ruiqiang Tao Hongfu Liang Yicong Zhou Rihui Yao Junbiao Peng All-Sputtering, High-Transparency, Good-Stability Coplanar Top-Gate Thin Film Transistors Applied Sciences thin film transistors stability top-gate Nd-IZO |
| title | All-Sputtering, High-Transparency, Good-Stability Coplanar Top-Gate Thin Film Transistors |
| title_full | All-Sputtering, High-Transparency, Good-Stability Coplanar Top-Gate Thin Film Transistors |
| title_fullStr | All-Sputtering, High-Transparency, Good-Stability Coplanar Top-Gate Thin Film Transistors |
| title_full_unstemmed | All-Sputtering, High-Transparency, Good-Stability Coplanar Top-Gate Thin Film Transistors |
| title_short | All-Sputtering, High-Transparency, Good-Stability Coplanar Top-Gate Thin Film Transistors |
| title_sort | all sputtering high transparency good stability coplanar top gate thin film transistors |
| topic | thin film transistors stability top-gate Nd-IZO |
| url | http://www.mdpi.com/2076-3417/9/1/83 |
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