Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode

Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode

This work successfully achieves a strain-free AlN film with low dislocation density for DUV-LED through graphene-driving strain-pre-store engineering and present the unique mechanism of strain-relaxation in QvdW epitaxy.

Bibliographic Details
Main Authors: Hongliang Chang, Zhetong Liu, Shenyuan Yang, Yaqi Gao, Jingyuan Shan, Bingyao Liu, Jingyu Sun, Zhaolong Chen, Jianchang Yan, Zhiqiang Liu, Junxi Wang, Peng Gao, Jinmin Li, Zhongfan Liu, Tongbo Wei
Format: Article
Language:English
Published: Nature Publishing Group 2022-04-01
Series:Light: Science & Applications
Online Access:https://doi.org/10.1038/s41377-022-00756-1

Internet

https://doi.org/10.1038/s41377-022-00756-1

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