High temperature AlInP X-ray spectrometers
Abstract Two custom-made Al0.52In0.48P p+-i-n+ mesa photodiodes with different diameters (217 µm ± 15 µm and 409 µm ± 28 µm) and i layer thicknesses of 6 µm have been electrically characterised over the temperature range 0 °C to 100 °C. Each photodiode was then investigated as a high-temperature-tol...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2019-08-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-019-48394-9 |