High-Temperature Annealing Effects on Atomically Thin Tungsten Diselenide Field-Effect Transistor
Two-dimensional (2D) material-based devices are expected to operate under high temperatures induced by Joule heating and environmental conditions when integrated into compact integrated circuits for practical applications. However, the behavior of these materials at high operating temperatures is ob...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-08-01
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| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/12/16/8119 |