High-Temperature Annealing Effects on Atomically Thin Tungsten Diselenide Field-Effect Transistor
Two-dimensional (2D) material-based devices are expected to operate under high temperatures induced by Joule heating and environmental conditions when integrated into compact integrated circuits for practical applications. However, the behavior of these materials at high operating temperatures is ob...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-08-01
|
| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/12/16/8119 |
| _version_ | 1797411373726040064 |
|---|---|
| author | Muhammad Atif Khan Muhammad Qasim Mehmood Yehia Massoud |
| author_facet | Muhammad Atif Khan Muhammad Qasim Mehmood Yehia Massoud |
| author_sort | Muhammad Atif Khan |
| collection | DOAJ |
| description | Two-dimensional (2D) material-based devices are expected to operate under high temperatures induced by Joule heating and environmental conditions when integrated into compact integrated circuits for practical applications. However, the behavior of these materials at high operating temperatures is obscure as most studies emphasize only room temperature or low-temperature operation. Here, the high-temperature electrical response of the tungsten diselenide (WSe<sub>2</sub>) field-effect transistor was studied. It is revealed that 350 K is the optimal annealing temperature for the WSe<sub>2</sub> transistor, and annealing at this temperature improves on-current, field-effect mobility and on/off ratio around three times. Annealing beyond this temperature (360 K to 670 K) adversely affects the device performance attributed to the partial oxidation of WSe<sub>2</sub> at higher temperatures. An increase in hysteresis also confirms the formation of new traps as the device is annealed beyond 350 K. These findings explicate the thermal stability of WSe<sub>2</sub> and can help design 2D materials-based durable devices for high-temperature practical applications. |
| first_indexed | 2024-03-09T04:44:10Z |
| format | Article |
| id | doaj.art-a1a3ebe8c2544f808467639b534567e8 |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-03-09T04:44:10Z |
| publishDate | 2022-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-a1a3ebe8c2544f808467639b534567e82023-12-03T13:17:25ZengMDPI AGApplied Sciences2076-34172022-08-011216811910.3390/app12168119High-Temperature Annealing Effects on Atomically Thin Tungsten Diselenide Field-Effect TransistorMuhammad Atif Khan0Muhammad Qasim Mehmood1Yehia Massoud2Innovative Technologies Laboratories (ITL), King Abdullah University of Science and Technology (KAUST), Thuwal 23955, Saudi ArabiaInnovative Technologies Laboratories (ITL), King Abdullah University of Science and Technology (KAUST), Thuwal 23955, Saudi ArabiaInnovative Technologies Laboratories (ITL), King Abdullah University of Science and Technology (KAUST), Thuwal 23955, Saudi ArabiaTwo-dimensional (2D) material-based devices are expected to operate under high temperatures induced by Joule heating and environmental conditions when integrated into compact integrated circuits for practical applications. However, the behavior of these materials at high operating temperatures is obscure as most studies emphasize only room temperature or low-temperature operation. Here, the high-temperature electrical response of the tungsten diselenide (WSe<sub>2</sub>) field-effect transistor was studied. It is revealed that 350 K is the optimal annealing temperature for the WSe<sub>2</sub> transistor, and annealing at this temperature improves on-current, field-effect mobility and on/off ratio around three times. Annealing beyond this temperature (360 K to 670 K) adversely affects the device performance attributed to the partial oxidation of WSe<sub>2</sub> at higher temperatures. An increase in hysteresis also confirms the formation of new traps as the device is annealed beyond 350 K. These findings explicate the thermal stability of WSe<sub>2</sub> and can help design 2D materials-based durable devices for high-temperature practical applications.https://www.mdpi.com/2076-3417/12/16/8119annealing2D materialsWSe<sub>2</sub>mobilityfield-effect transistorthermal stability |
| spellingShingle | Muhammad Atif Khan Muhammad Qasim Mehmood Yehia Massoud High-Temperature Annealing Effects on Atomically Thin Tungsten Diselenide Field-Effect Transistor Applied Sciences annealing 2D materials WSe<sub>2</sub> mobility field-effect transistor thermal stability |
| title | High-Temperature Annealing Effects on Atomically Thin Tungsten Diselenide Field-Effect Transistor |
| title_full | High-Temperature Annealing Effects on Atomically Thin Tungsten Diselenide Field-Effect Transistor |
| title_fullStr | High-Temperature Annealing Effects on Atomically Thin Tungsten Diselenide Field-Effect Transistor |
| title_full_unstemmed | High-Temperature Annealing Effects on Atomically Thin Tungsten Diselenide Field-Effect Transistor |
| title_short | High-Temperature Annealing Effects on Atomically Thin Tungsten Diselenide Field-Effect Transistor |
| title_sort | high temperature annealing effects on atomically thin tungsten diselenide field effect transistor |
| topic | annealing 2D materials WSe<sub>2</sub> mobility field-effect transistor thermal stability |
| url | https://www.mdpi.com/2076-3417/12/16/8119 |
| work_keys_str_mv | AT muhammadatifkhan hightemperatureannealingeffectsonatomicallythintungstendiselenidefieldeffecttransistor AT muhammadqasimmehmood hightemperatureannealingeffectsonatomicallythintungstendiselenidefieldeffecttransistor AT yehiamassoud hightemperatureannealingeffectsonatomicallythintungstendiselenidefieldeffecttransistor |