Nonlinear Capacitance Compensation Method for Integrating a Metal–Semiconductor–Metal Varactor with a Gallium Nitride High Electron Mobility Transistor Power Amplifier
A nonlinear capacitance compensation technique is presented in this paper to enhance the linearity of a power amplifier (PA) in the GaN process. The method involves placing an MSM varactor device alongside the GaN HEMT device, which works as the amplifying unit such that the overall capacitance obse...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-03-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/13/7/1265 |