Nonlinear Capacitance Compensation Method for Integrating a Metal–Semiconductor–Metal Varactor with a Gallium Nitride High Electron Mobility Transistor Power Amplifier
A nonlinear capacitance compensation technique is presented in this paper to enhance the linearity of a power amplifier (PA) in the GaN process. The method involves placing an MSM varactor device alongside the GaN HEMT device, which works as the amplifying unit such that the overall capacitance obse...
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MDPI AG
2024-03-01
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| Online Access: | https://www.mdpi.com/2079-9292/13/7/1265 |
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| author | Ke Li Yitian Gu Haowen Guo Xinbo Zou |
| author_facet | Ke Li Yitian Gu Haowen Guo Xinbo Zou |
| author_sort | Ke Li |
| collection | DOAJ |
| description | A nonlinear capacitance compensation technique is presented in this paper to enhance the linearity of a power amplifier (PA) in the GaN process. The method involves placing an MSM varactor device alongside the GaN HEMT device, which works as the amplifying unit such that the overall capacitance observed at the amplifier input is constant, thus improving linearity. This approach is a reliable and straightforward way to improve PA linearity in the GaN process. The proof-of-concept prototype in this study involves the fabrication of a PA device using a standard GaN HEMT process, which successfully integrates the proposed compensation technique and demonstrates excellent compatibility with existing processes. The prototype has a saturation output power of 18 dBm, a peak power-added efficiency of 51.8%, and a small signal gain of 15.5 dB at 1 GHz. The measured AM–PM distortion at the 5 dB compression point is reduced by more than 50% compared to that of an uncompensated device. Furthermore, the results of third-order intermodulation distortion demonstrate the effectiveness of the linearity enhancement concept, with values improved by more than 5 dB in the linear region compared to those of the uncompensated device. All of the results demonstrate the potential utility of this design approach for wireless communication applications. |
| first_indexed | 2024-04-24T10:46:53Z |
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| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-04-24T10:46:53Z |
| publishDate | 2024-03-01 |
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| spelling | doaj.art-a1b2f230b39144bab813e2f192d2a7372024-04-12T13:17:14ZengMDPI AGElectronics2079-92922024-03-01137126510.3390/electronics13071265Nonlinear Capacitance Compensation Method for Integrating a Metal–Semiconductor–Metal Varactor with a Gallium Nitride High Electron Mobility Transistor Power AmplifierKe Li0Yitian Gu1Haowen Guo2Xinbo Zou3School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, ChinaSchool of Information Science and Technology, ShanghaiTech University, Shanghai 201210, ChinaSchool of Information Science and Technology, ShanghaiTech University, Shanghai 201210, ChinaSchool of Information Science and Technology, ShanghaiTech University, Shanghai 201210, ChinaA nonlinear capacitance compensation technique is presented in this paper to enhance the linearity of a power amplifier (PA) in the GaN process. The method involves placing an MSM varactor device alongside the GaN HEMT device, which works as the amplifying unit such that the overall capacitance observed at the amplifier input is constant, thus improving linearity. This approach is a reliable and straightforward way to improve PA linearity in the GaN process. The proof-of-concept prototype in this study involves the fabrication of a PA device using a standard GaN HEMT process, which successfully integrates the proposed compensation technique and demonstrates excellent compatibility with existing processes. The prototype has a saturation output power of 18 dBm, a peak power-added efficiency of 51.8%, and a small signal gain of 15.5 dB at 1 GHz. The measured AM–PM distortion at the 5 dB compression point is reduced by more than 50% compared to that of an uncompensated device. Furthermore, the results of third-order intermodulation distortion demonstrate the effectiveness of the linearity enhancement concept, with values improved by more than 5 dB in the linear region compared to those of the uncompensated device. All of the results demonstrate the potential utility of this design approach for wireless communication applications.https://www.mdpi.com/2079-9292/13/7/1265GaN HEMTpower amplifierAM–PM distortion |
| spellingShingle | Ke Li Yitian Gu Haowen Guo Xinbo Zou Nonlinear Capacitance Compensation Method for Integrating a Metal–Semiconductor–Metal Varactor with a Gallium Nitride High Electron Mobility Transistor Power Amplifier Electronics GaN HEMT power amplifier AM–PM distortion |
| title | Nonlinear Capacitance Compensation Method for Integrating a Metal–Semiconductor–Metal Varactor with a Gallium Nitride High Electron Mobility Transistor Power Amplifier |
| title_full | Nonlinear Capacitance Compensation Method for Integrating a Metal–Semiconductor–Metal Varactor with a Gallium Nitride High Electron Mobility Transistor Power Amplifier |
| title_fullStr | Nonlinear Capacitance Compensation Method for Integrating a Metal–Semiconductor–Metal Varactor with a Gallium Nitride High Electron Mobility Transistor Power Amplifier |
| title_full_unstemmed | Nonlinear Capacitance Compensation Method for Integrating a Metal–Semiconductor–Metal Varactor with a Gallium Nitride High Electron Mobility Transistor Power Amplifier |
| title_short | Nonlinear Capacitance Compensation Method for Integrating a Metal–Semiconductor–Metal Varactor with a Gallium Nitride High Electron Mobility Transistor Power Amplifier |
| title_sort | nonlinear capacitance compensation method for integrating a metal semiconductor metal varactor with a gallium nitride high electron mobility transistor power amplifier |
| topic | GaN HEMT power amplifier AM–PM distortion |
| url | https://www.mdpi.com/2079-9292/13/7/1265 |
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