Study on Neutron Irradiation-Induced Structural Defects of GaN-Based Heterostructures

Study on Neutron Irradiation-Induced Structural Defects of GaN-Based Heterostructures

The GaN-based heterostructures and related HEMTs (High Electron Mobility Transistors) were investigated by 1MeV neutrons at fluences up to 1015 cm−2, yielding an increase of the densities of screw dislocations and edge dislocations for GaN-based heterostructures. It gave the result that ne...

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Bibliographic Details
Main Authors: Wenping Gu, Xiaobo Xu, Lin Zhang, Zhiyuan Gao, Xiaochuan Hu, Zan Zhang
Format: Article
Language:English
Published: MDPI AG 2018-05-01
Series:Crystals
Subjects:
GaN-based heterostructures
neutron-irradiation
structural defects
annealing
Online Access:http://www.mdpi.com/2073-4352/8/5/198

Internet

http://www.mdpi.com/2073-4352/8/5/198

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