Study on Neutron Irradiation-Induced Structural Defects of GaN-Based Heterostructures
The GaN-based heterostructures and related HEMTs (High Electron Mobility Transistors) were investigated by 1MeV neutrons at fluences up to 1015 cm−2, yielding an increase of the densities of screw dislocations and edge dislocations for GaN-based heterostructures. It gave the result that ne...
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| Format: | Article |
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MDPI AG
2018-05-01
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| Series: | Crystals |
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| Online Access: | http://www.mdpi.com/2073-4352/8/5/198 |
| _version_ | 1798026995597049856 |
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| author | Wenping Gu Xiaobo Xu Lin Zhang Zhiyuan Gao Xiaochuan Hu Zan Zhang |
| author_facet | Wenping Gu Xiaobo Xu Lin Zhang Zhiyuan Gao Xiaochuan Hu Zan Zhang |
| author_sort | Wenping Gu |
| collection | DOAJ |
| description | The GaN-based heterostructures and related HEMTs (High Electron Mobility Transistors) were investigated by 1MeV neutrons at fluences up to 1015 cm−2, yielding an increase of the densities of screw dislocations and edge dislocations for GaN-based heterostructures. It gave the result that neutron irradiation-induced structural defects into GaN-based materials, and the irradiation-induced dislocations would propagate to the material surface causing surface morphology deterioration. However, the GaN-based material strain was robust to neutrons, and the more initial dislocations, the easier to generate irradiation defects and thus, more strongly affecting the electrical property degradations of materials and devices. Meanwhile, the reduction of the two-dimensional electron gas (2DEG) concentration (ns) caused by irradiation-induced defects led to the reducing the drain current. Moreover, the significant degradation of the reverse gate leakage current at fluences ranging from 1014 to 1015 cm−2 could be attributed to the irradiation-induced deep defects. The neutron induced damage was more difficult to anneal recovery than other particles, due to the neutron irradiation-induced deep levels and defect complexes such as defect clusters. |
| first_indexed | 2024-04-11T18:44:26Z |
| format | Article |
| id | doaj.art-a1b5139b95184a71b1197c7852e323cd |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-04-11T18:44:26Z |
| publishDate | 2018-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-a1b5139b95184a71b1197c7852e323cd2022-12-22T04:08:52ZengMDPI AGCrystals2073-43522018-05-018519810.3390/cryst8050198cryst8050198Study on Neutron Irradiation-Induced Structural Defects of GaN-Based HeterostructuresWenping Gu0Xiaobo Xu1Lin Zhang2Zhiyuan Gao3Xiaochuan Hu4Zan Zhang5School of Electronic and Control Engineering, Chang’an University, Xi’an 710064, ChinaSchool of Electronic and Control Engineering, Chang’an University, Xi’an 710064, ChinaSchool of Electronic and Control Engineering, Chang’an University, Xi’an 710064, ChinaKey Laboratory of Opto-electronics Technology, Microelectronic School, Beijing University of Technology, Beijing 100124, ChinaSchool of Electronic and Control Engineering, Chang’an University, Xi’an 710064, ChinaSchool of Electronic and Control Engineering, Chang’an University, Xi’an 710064, ChinaThe GaN-based heterostructures and related HEMTs (High Electron Mobility Transistors) were investigated by 1MeV neutrons at fluences up to 1015 cm−2, yielding an increase of the densities of screw dislocations and edge dislocations for GaN-based heterostructures. It gave the result that neutron irradiation-induced structural defects into GaN-based materials, and the irradiation-induced dislocations would propagate to the material surface causing surface morphology deterioration. However, the GaN-based material strain was robust to neutrons, and the more initial dislocations, the easier to generate irradiation defects and thus, more strongly affecting the electrical property degradations of materials and devices. Meanwhile, the reduction of the two-dimensional electron gas (2DEG) concentration (ns) caused by irradiation-induced defects led to the reducing the drain current. Moreover, the significant degradation of the reverse gate leakage current at fluences ranging from 1014 to 1015 cm−2 could be attributed to the irradiation-induced deep defects. The neutron induced damage was more difficult to anneal recovery than other particles, due to the neutron irradiation-induced deep levels and defect complexes such as defect clusters.http://www.mdpi.com/2073-4352/8/5/198GaN-based heterostructuresneutron-irradiationstructural defectsannealing |
| spellingShingle | Wenping Gu Xiaobo Xu Lin Zhang Zhiyuan Gao Xiaochuan Hu Zan Zhang Study on Neutron Irradiation-Induced Structural Defects of GaN-Based Heterostructures Crystals GaN-based heterostructures neutron-irradiation structural defects annealing |
| title | Study on Neutron Irradiation-Induced Structural Defects of GaN-Based Heterostructures |
| title_full | Study on Neutron Irradiation-Induced Structural Defects of GaN-Based Heterostructures |
| title_fullStr | Study on Neutron Irradiation-Induced Structural Defects of GaN-Based Heterostructures |
| title_full_unstemmed | Study on Neutron Irradiation-Induced Structural Defects of GaN-Based Heterostructures |
| title_short | Study on Neutron Irradiation-Induced Structural Defects of GaN-Based Heterostructures |
| title_sort | study on neutron irradiation induced structural defects of gan based heterostructures |
| topic | GaN-based heterostructures neutron-irradiation structural defects annealing |
| url | http://www.mdpi.com/2073-4352/8/5/198 |
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