Effects of Al doping on dislocation inclinations and strain of GaN films on Si substrates

Effects of Al doping on dislocation inclinations and strain of GaN films on Si substrates

We present how the interaction between Al dopants and threading dislocations affects dislocation inclinations and then plays an important role in controlling residual strain in GaN-on-Si epitaxial films. When the Al concentration in the GaN epitaxial film is increased to 0.85%, the dislocations exte...

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Bibliographic Details
Main Authors:	Jie Zhang, Xuelin Yang, Hongping Ma, Qingchun Zhang, Bo Shen
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2023-02-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/5.0126796

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