Increased dephasing length in heavily doped GaAs
Ion implantation of S and Te followed by sub-second flash lamp annealing with peak temperature about 1100 °C is employed to obtain metallic n ^++ -GaAs layers. The electron concentration in annealed GaAs is as high as 5 × 10 ^19 cm ^−3 , which is several times higher than the doping level achievabl...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2021-01-01
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| Series: | New Journal of Physics |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/1367-2630/ac1a98 |