Electrical Characterization of the Backside Interface on BSI Global Shutter Pixels with Tungsten-Shield Test Structures on CDTI Process

Electrical Characterization of the Backside Interface on BSI Global Shutter Pixels with Tungsten-Shield Test Structures on CDTI Process

A new methodology is presented using well known electrical characterization techniques on dedicated single devices in order to investigate backside interface contribution to the measured pixel dark current in BSI CMOS image sensors technologies. Extractions of interface states and charges within the...

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Bibliographic Details
Main Authors: Célestin Doyen, Stéphane Ricq, Pierre Magnan, Olivier Marcelot, Marios Barlas, Sébastien Place
Format: Article
Language:English
Published: MDPI AG 2020-01-01
Series:Sensors
Subjects:
back-side illumination imager
dark current
interface states
passivation
electrical device characterization
test structures
w-shield
cdti
charge pumping
cv
Online Access:https://www.mdpi.com/1424-8220/20/1/287

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https://www.mdpi.com/1424-8220/20/1/287

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