Forming-free bipolar and unipolar resistive switching behaviors with low operating voltage in Ag/Ti/CeO2/Pt devices

Resistive switching devices are promising candidates to replace today’s nonvolatile memory device, and find applications in neuromorphic computing. In this study, bipolar resistive switching (BRS) and unipolar resistive switching (URS) behaviors at room temperature were shown for Ag/Ti/CeO2/Pt devic...

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Detaylı Bibliyografya
Asıl Yazarlar: Wenqing Wang, Baolin Zhang, Hongbin Zhao
Materyal Türü: Makale
Dil:English
Baskı/Yayın Bilgisi: Elsevier 2020-03-01
Seri Bilgileri:Results in Physics
Konular:
Online Erişim:http://www.sciencedirect.com/science/article/pii/S2211379719334370