Improvement Breakdown Voltage by a Using Crown-Shaped Gate
In this paper, a crown-shaped trench gate formed by a sidewall spacer in insulated gate bipolar transistors (IGBT) is proposed to improve breakdown voltage. When a sidewall spacer is added to trench bottom corners, the electric field is distributed to the surface of the sidewall spacer and decreased...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-01-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/12/3/474 |