Two-Dimensional Electron Gas in Thin N-Polar GaN Channels on AlN on Sapphire Templates

Two-Dimensional Electron Gas in Thin N-Polar GaN Channels on AlN on Sapphire Templates

We report on 2-dimensional electron gases realized in binary N-polar GaN channels on AlN on sapphire templates grown by metal–organic vapor phase epitaxy. The measured sheet carrier density of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline&qu...

पूर्ण विवरण

ग्रंथसूची विवरण
मुख्य लेखकों: Markus Pristovsek, Itsuki Furuhashi, Xu Yang, Chengzhi Zhang, Matthew D. Smith
स्वरूप: लेख
भाषा:English
प्रकाशित: MDPI AG 2024-09-01
श्रृंखला:Crystals
विषय:
N-polar AlN
N-polar GaN
MOVPE
impurity incorporation
GaN relaxation
ऑनलाइन पहुंच:https://www.mdpi.com/2073-4352/14/9/822

इंटरनेट

https://www.mdpi.com/2073-4352/14/9/822

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