Comprehensive Analysis and Improvement Methods of Noise Immunity of Desat Protection for High Voltage SiC MOSFETs With High DV/DT

Comprehensive Analysis and Improvement Methods of Noise Immunity of Desat Protection for High Voltage SiC MOSFETs With High DV/DT

This paper comprehensively analyzes desaturation (desat) protection for high voltage (&gt;3.3 kV) silicon carbide (SiC) MOSFETs and especially how to build in noise immunity under high <italic>dv&#x002F;dt</italic>. This study establishes a solid foundation for understanding the...

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Bibliographic Details
Main Authors: Xingxuan Huang, Shiqi Ji, Cheng Nie, Dingrui Li, Min Lin, Leon M. Tolbert, Fred Wang, William Giewont
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Open Journal of Power Electronics
Subjects:
SiC MOSFETs
high dv/dt
noise immunity
desat protection
gate driver design
Online Access:https://ieeexplore.ieee.org/document/9648010/

Internet

https://ieeexplore.ieee.org/document/9648010/

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