Effect of p-type doping on the electronic characteristics of negative electron affinity Al0.5Ga0.5N nanowire photocathodes

Based on the first principles calculation method, we explored the impacts of p-type doping on the electronic characteristics of Al0.5Ga0.5N nanowire. Firstly, Al0.5Ga0.5N nanowires are simulated with different doping elements (Be, Mg and Zn), as well as different doping strategies (interstitial dopi...

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Bibliographic Details
Main Authors: Yiting Li, Yang Shen, Qianglong Fang, Shuqin Zhang, Xiaodong Yang, Liang Chen, Shangzhong Jin
Format: Article
Language:English
Published: Elsevier 2022-07-01
Series:Journal of Materials Research and Technology
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2238785422008808