Supply Voltage and Temperature Dependence of Single-Event Transient in 28-nm FDSOI MOSFETs

Supply Voltage and Temperature Dependence of Single-Event Transient in 28-nm FDSOI MOSFETs

Based on three-dimensional (3D) technology computer aided design (TCAD) simulations, the supply voltage and temperature dependence of single-event transient (SET) pulse width in 28-nm fully-depleted silicon-on-insulator (FDSOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) is investig...

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Bibliographic Details
Main Authors: Jingyan Xu, Yang Guo, Ruiqiang Song, Bin Liang, Yaqing Chi
Format: Article
Language:English
Published: MDPI AG 2019-06-01
Series:Symmetry
Subjects:
supply voltage
temperature
single-event transient
anti-temperature effect
fully-depleted silicon-on-insulator
Online Access:https://www.mdpi.com/2073-8994/11/6/793

Internet

https://www.mdpi.com/2073-8994/11/6/793

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