| Summary: | Based on three-dimensional (3D) technology computer aided design (TCAD) simulations, the supply voltage and temperature dependence of single-event transient (SET) pulse width in 28-nm fully-depleted silicon-on-insulator (FDSOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) is investigated. FDSOI MOSFETs are symmetry devices with a superior control of the short channel effects (SCEs) and single-event effects (SEEs). Previous studies have suggested that the SET width is invariant when the temperature changes in FDSOI devices. Simulation results show that the SET pulse width increases as the supply voltage decreases. When the supply voltage is below 0.6 V, the SET pulse width increases sharply with the decrease of the supply voltage. The SET pulse width is not sensitive to temperature when the supply voltage is 1 V. However, when the supply voltage is 0.6 V or less, the SET pulse width exhibits an anti-temperature effect, and the anti-temperature effect is significantly enhanced as the supply voltage drops. Besides, the mechanism is analyzed from the aspects of saturation current and charge collection.
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