Supply Voltage and Temperature Dependence of Single-Event Transient in 28-nm FDSOI MOSFETs
Based on three-dimensional (3D) technology computer aided design (TCAD) simulations, the supply voltage and temperature dependence of single-event transient (SET) pulse width in 28-nm fully-depleted silicon-on-insulator (FDSOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) is investig...
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-06-01
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| Series: | Symmetry |
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| Online Access: | https://www.mdpi.com/2073-8994/11/6/793 |
| _version_ | 1797999827648249856 |
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| author | Jingyan Xu Yang Guo Ruiqiang Song Bin Liang Yaqing Chi |
| author_facet | Jingyan Xu Yang Guo Ruiqiang Song Bin Liang Yaqing Chi |
| author_sort | Jingyan Xu |
| collection | DOAJ |
| description | Based on three-dimensional (3D) technology computer aided design (TCAD) simulations, the supply voltage and temperature dependence of single-event transient (SET) pulse width in 28-nm fully-depleted silicon-on-insulator (FDSOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) is investigated. FDSOI MOSFETs are symmetry devices with a superior control of the short channel effects (SCEs) and single-event effects (SEEs). Previous studies have suggested that the SET width is invariant when the temperature changes in FDSOI devices. Simulation results show that the SET pulse width increases as the supply voltage decreases. When the supply voltage is below 0.6 V, the SET pulse width increases sharply with the decrease of the supply voltage. The SET pulse width is not sensitive to temperature when the supply voltage is 1 V. However, when the supply voltage is 0.6 V or less, the SET pulse width exhibits an anti-temperature effect, and the anti-temperature effect is significantly enhanced as the supply voltage drops. Besides, the mechanism is analyzed from the aspects of saturation current and charge collection. |
| first_indexed | 2024-04-11T11:10:56Z |
| format | Article |
| id | doaj.art-a2cc5c63a6d64788aad35abecfaaccd6 |
| institution | Directory Open Access Journal |
| issn | 2073-8994 |
| language | English |
| last_indexed | 2024-04-11T11:10:56Z |
| publishDate | 2019-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Symmetry |
| spelling | doaj.art-a2cc5c63a6d64788aad35abecfaaccd62022-12-22T04:27:30ZengMDPI AGSymmetry2073-89942019-06-0111679310.3390/sym11060793sym11060793Supply Voltage and Temperature Dependence of Single-Event Transient in 28-nm FDSOI MOSFETsJingyan Xu0Yang Guo1Ruiqiang Song2Bin Liang3Yaqing Chi4College of Computer, National University of Defense Technology, Changsha 410073, ChinaCollege of Computer, National University of Defense Technology, Changsha 410073, ChinaCollege of Computer, National University of Defense Technology, Changsha 410073, ChinaCollege of Computer, National University of Defense Technology, Changsha 410073, ChinaCollege of Computer, National University of Defense Technology, Changsha 410073, ChinaBased on three-dimensional (3D) technology computer aided design (TCAD) simulations, the supply voltage and temperature dependence of single-event transient (SET) pulse width in 28-nm fully-depleted silicon-on-insulator (FDSOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) is investigated. FDSOI MOSFETs are symmetry devices with a superior control of the short channel effects (SCEs) and single-event effects (SEEs). Previous studies have suggested that the SET width is invariant when the temperature changes in FDSOI devices. Simulation results show that the SET pulse width increases as the supply voltage decreases. When the supply voltage is below 0.6 V, the SET pulse width increases sharply with the decrease of the supply voltage. The SET pulse width is not sensitive to temperature when the supply voltage is 1 V. However, when the supply voltage is 0.6 V or less, the SET pulse width exhibits an anti-temperature effect, and the anti-temperature effect is significantly enhanced as the supply voltage drops. Besides, the mechanism is analyzed from the aspects of saturation current and charge collection.https://www.mdpi.com/2073-8994/11/6/793supply voltagetemperaturesingle-event transientanti-temperature effectfully-depleted silicon-on-insulator |
| spellingShingle | Jingyan Xu Yang Guo Ruiqiang Song Bin Liang Yaqing Chi Supply Voltage and Temperature Dependence of Single-Event Transient in 28-nm FDSOI MOSFETs Symmetry supply voltage temperature single-event transient anti-temperature effect fully-depleted silicon-on-insulator |
| title | Supply Voltage and Temperature Dependence of Single-Event Transient in 28-nm FDSOI MOSFETs |
| title_full | Supply Voltage and Temperature Dependence of Single-Event Transient in 28-nm FDSOI MOSFETs |
| title_fullStr | Supply Voltage and Temperature Dependence of Single-Event Transient in 28-nm FDSOI MOSFETs |
| title_full_unstemmed | Supply Voltage and Temperature Dependence of Single-Event Transient in 28-nm FDSOI MOSFETs |
| title_short | Supply Voltage and Temperature Dependence of Single-Event Transient in 28-nm FDSOI MOSFETs |
| title_sort | supply voltage and temperature dependence of single event transient in 28 nm fdsoi mosfets |
| topic | supply voltage temperature single-event transient anti-temperature effect fully-depleted silicon-on-insulator |
| url | https://www.mdpi.com/2073-8994/11/6/793 |
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