2.6 μm MBE grown InGaAs detectors with dark current of SRH and TAT

2.6 μm MBE grown InGaAs detectors with dark current of SRH and TAT

We fabricate 2.6 μm InGaAs photodetectors by MBE technology and study its dark current mechanisms. Deep-level transient spectroscopy (DLTS) demonstrates a deep-level trap located at Ec - 0.25 eV in the absorption layer. Using the trap parameters, a dark current model is constructed and the device si...

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Bibliographic Details
Main Authors: Xiaoli Ji, Baiqing Liu, Hengjing Tang, Xuelin Yang, Xue Li, HaiMei Gong, Bo Shen, Ping Han, Feng Yan
Format: Article
Language:English
Published: AIP Publishing LLC 2014-08-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4894142

Internet

http://dx.doi.org/10.1063/1.4894142

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