Analysis and Suppression of Unwanted Turn-On and Parasitic Oscillation in SiC JFET-Based Bi-Directional Switches

Analysis and Suppression of Unwanted Turn-On and Parasitic Oscillation in SiC JFET-Based Bi-Directional Switches

Silicon Carbide (SiC)-based Bi-Directional Switches (BDS) have great potential in the construction of several power electronic circuits including multi-level converters, solid-state breakers, matrix converters, HERIC (high efficient and reliable inverter concept) photovoltaic grid-connected inverter...

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Bibliographic Details
Main Authors: Lina Wang, Junyi Yang, Haobo Ma, Zeyuan Wang, Kabir Oladele Olanrewaju, Kamel Djamel Eddine Kerrouche
Format: Article
Language:English
Published: MDPI AG 2018-07-01
Series:Electronics
Subjects:
SiC JFET
bi-directional switches
cascode-light
unwanted turn-on
parasitic oscillation
Online Access:http://www.mdpi.com/2079-9292/7/8/126

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http://www.mdpi.com/2079-9292/7/8/126

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