Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes

Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes

Nanosheet (NS) and nanowire (NW) FET architectures scaled to a gate length (L<sub>G</sub>) of 16 nm and below are benchmarked against equivalent FinFETs. The device performance is predicted using a 3D finite element drift-diffusion/Monte Carlo simulation toolbox with integrated 2D Schro&...

Полное описание

Библиографические подробности
Главные авторы: Daniel Nagy, Gabriel Espineira, Guillermo Indalecio, Antonio J. Garcia-Loureiro, Karol Kalna, Natalia Seoane
Формат: Статья
Язык:English
Опубликовано: IEEE 2020-01-01
Серии:IEEE Access
Предметы:
Monte Carlo
Schrödinger quantum correction
FinFET
nanowire
nanosheet
Online-ссылка:https://ieeexplore.ieee.org/document/9036890/

Internet

https://ieeexplore.ieee.org/document/9036890/

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