Technological features of the method of liquid-phase epitaxy when growing InP/GaInAsP heterostructures
Semiconductor devices of quantum electronics based on InP/GaInAsP heterostructures require the creation of non-defective chips for emitting devices and photodetectors. The production of such chips is impossible without a thorough technological study of the growth processes of epitaxial structures. O...
| Main Authors: | , , , , |
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| Format: | Article |
| Jezik: | English |
| Izdano: |
Voronezh State University
2021-09-01
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| Serija: | Конденсированные среды и межфазные границы |
| Teme: | |
| Online dostop: | https://journals.vsu.ru/kcmf/article/view/3528 |