Improvement in Instability of Transparent ALD ZnO TFTs Under Negative Bias Illumination Stress With SiO/AlO Bilayer Dielectric<sub/><sub/><sub/>

Improvement in Instability of Transparent ALD ZnO TFTs Under Negative Bias Illumination Stress With SiO/AlO Bilayer Dielectric<sub/><sub/><sub/>

The theory of oxygen vacancy related deep energy defects and valence band offset (VBO) between gate insulator and channel codetermining the threshold voltage shift <inline-formula> <tex-math notation="LaTeX">$(\Delta {V}_{\mathbf {\mathrm {TH}}})$ </tex-math></inline-f...

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Bibliographic Details
Main Authors: Wanpeng Zhao, Ning Zhang, Xinyu Zhang, Chong Yao, Junfeng Zhang, Shurong Dong, Yang Liu, Zhi Ye, Jikui Luo
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Zinc Oxide
thin-film transistor
negative bias illumination stress (NBIS)
stability
holesblocking layer (HBL)
Online Access:https://ieeexplore.ieee.org/document/9913213/

Internet

https://ieeexplore.ieee.org/document/9913213/

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