Comparison of Fitting Current–Voltage Characteristics Curves of FinFET Transistors with Various Fixed Parameters
In the deep submicron regime, FinFET successfully suppresses the leakage current using a 3D fin-like channel substrate, which gets depleted and blocks possible leakage as the gate is applied with a bias wholly wrapping the channel. Fortunately, a scanning photo-lithography using extensive ultraviole...
Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2022-10-01
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Series: | Applied Sciences |
Subjects: | |
Online Access: | https://www.mdpi.com/2076-3417/12/20/10519 |