Comparison of Fitting Current–Voltage Characteristics Curves of FinFET Transistors with Various Fixed Parameters
In the deep submicron regime, FinFET successfully suppresses the leakage current using a 3D fin-like channel substrate, which gets depleted and blocks possible leakage as the gate is applied with a bias wholly wrapping the channel. Fortunately, a scanning photo-lithography using extensive ultraviole...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-10-01
|
| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/12/20/10519 |