Impact of interface traps on charge noise and low-density transport properties in Ge/SiGe heterostructures

Impact of interface traps on charge noise and low-density transport properties in Ge/SiGe heterostructures

Abstract Hole spins in Ge/SiGe heterostructures have emerged as an interesting qubit platform with favourable properties such as fast electrical control and noise-resilient operation at sweet spots. However, commonly observed gate-induced electrostatic disorder, drifts, and hysteresis hinder reprodu...

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Detalles Bibliográficos
Main Authors: Leonardo Massai, Bence Hetényi, Matthias Mergenthaler, Felix J. Schupp, Lisa Sommer, Stephan Paredes, Stephen W. Bedell, Patrick Harvey-Collard, Gian Salis, Andreas Fuhrer, Nico W. Hendrickx
Formato: Artigo
Idioma:English
Publicado: Nature Portfolio 2024-08-01
Series:Communications Materials
Acceso en liña:https://doi.org/10.1038/s43246-024-00563-8

Internet

https://doi.org/10.1038/s43246-024-00563-8

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