Simulation Study of a 650V Hybrid-Channel SiC Trench MOSFET with Improved On-State Performance

Simulation Study of a 650V Hybrid-Channel SiC Trench MOSFET with Improved On-State Performance

Power converters utilising SiC MOSFETs have attracted significant interest from the automotive industry, renewable energy applications, data centres, and power supplies due to their improved efficiency and power density, reliability, and ability to deliver compact design solutions. This paper propos...

Full description

Bibliographic Details
Main Authors: L. Zhang, T. Dai, P.M. Gammon, V.A. Shah, P.A. Mawby, M. Antoniou
Format: Article
Language:English
Published: Elsevier 2023-03-01
Series:Power Electronic Devices and Components
Subjects:
Silicon carbide
MOSFET
Hybrid
Trench
Model
On-resistance
Online Access:http://www.sciencedirect.com/science/article/pii/S2772370422000281

Internet

http://www.sciencedirect.com/science/article/pii/S2772370422000281

Similar Items