BAlGaN light‐emitting diode emitting at 350 nm

BAlGaN light‐emitting diode emitting at 350 nm

Abstract In this work, the authors report the first demonstration of an ultraviolet light‐emitting diode (LED) with boron‐containing quantum wells (QWs). Secondary ion mass spectrometry measurements revealed a B concentration of 1% in the first QW with an increase in subsequent QWs and lingering dec...

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Bibliographic Details
Main Authors: Peter Milner, Vitaly Z. Zubialevich, Thomas O'Connor, Sandeep M. Singh, Davinder Singh, Brian Corbett, Peter J. Parbrook
Format: Article
Language:English
Published: Wiley 2023-10-01
Series:Electronics Letters
Subjects:
boron
light‐emitting diodes
MOCVD
optoelectronic devices
secondary ion mass spectroscopy
Online Access:https://doi.org/10.1049/ell2.12976

Internet

https://doi.org/10.1049/ell2.12976

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