BAlGaN light‐emitting diode emitting at 350 nm
Abstract In this work, the authors report the first demonstration of an ultraviolet light‐emitting diode (LED) with boron‐containing quantum wells (QWs). Secondary ion mass spectrometry measurements revealed a B concentration of 1% in the first QW with an increase in subsequent QWs and lingering dec...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2023-10-01
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| Series: | Electronics Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/ell2.12976 |
| _version_ | 1797661399140270080 |
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| author | Peter Milner Vitaly Z. Zubialevich Thomas O'Connor Sandeep M. Singh Davinder Singh Brian Corbett Peter J. Parbrook |
| author_facet | Peter Milner Vitaly Z. Zubialevich Thomas O'Connor Sandeep M. Singh Davinder Singh Brian Corbett Peter J. Parbrook |
| author_sort | Peter Milner |
| collection | DOAJ |
| description | Abstract In this work, the authors report the first demonstration of an ultraviolet light‐emitting diode (LED) with boron‐containing quantum wells (QWs). Secondary ion mass spectrometry measurements revealed a B concentration of 1% in the first QW with an increase in subsequent QWs and lingering decay into the p‐region, likely attributable to boron's surfactant nature. Electroluminescence emission from the BAlGaN LED was observed at 350 nm, with higher intensity compared to the AlGaN reference LED at low currents. A higher operating voltage compared to the reference LED was also observed which may be attributable to a nanomasking behaviour of boron in (Al)GaN alloys. |
| first_indexed | 2024-03-11T18:43:57Z |
| format | Article |
| id | doaj.art-a4650c7ae5654e4abb4e8b01c1e9e025 |
| institution | Directory Open Access Journal |
| issn | 0013-5194 1350-911X |
| language | English |
| last_indexed | 2024-03-11T18:43:57Z |
| publishDate | 2023-10-01 |
| publisher | Wiley |
| record_format | Article |
| series | Electronics Letters |
| spelling | doaj.art-a4650c7ae5654e4abb4e8b01c1e9e0252023-10-12T05:37:32ZengWileyElectronics Letters0013-51941350-911X2023-10-015919n/an/a10.1049/ell2.12976BAlGaN light‐emitting diode emitting at 350 nmPeter Milner0Vitaly Z. Zubialevich1Thomas O'Connor2Sandeep M. Singh3Davinder Singh4Brian Corbett5Peter J. Parbrook6Tyndall National Institute, University College Cork Lee Maltings, Dyke Parade Cork IrelandTyndall National Institute, University College Cork Lee Maltings, Dyke Parade Cork IrelandTyndall National Institute, University College Cork Lee Maltings, Dyke Parade Cork IrelandTyndall National Institute, University College Cork Lee Maltings, Dyke Parade Cork IrelandTyndall National Institute, University College Cork Lee Maltings, Dyke Parade Cork IrelandTyndall National Institute, University College Cork Lee Maltings, Dyke Parade Cork IrelandTyndall National Institute, University College Cork Lee Maltings, Dyke Parade Cork IrelandAbstract In this work, the authors report the first demonstration of an ultraviolet light‐emitting diode (LED) with boron‐containing quantum wells (QWs). Secondary ion mass spectrometry measurements revealed a B concentration of 1% in the first QW with an increase in subsequent QWs and lingering decay into the p‐region, likely attributable to boron's surfactant nature. Electroluminescence emission from the BAlGaN LED was observed at 350 nm, with higher intensity compared to the AlGaN reference LED at low currents. A higher operating voltage compared to the reference LED was also observed which may be attributable to a nanomasking behaviour of boron in (Al)GaN alloys.https://doi.org/10.1049/ell2.12976boronlight‐emitting diodesMOCVDoptoelectronic devicessecondary ion mass spectroscopy |
| spellingShingle | Peter Milner Vitaly Z. Zubialevich Thomas O'Connor Sandeep M. Singh Davinder Singh Brian Corbett Peter J. Parbrook BAlGaN light‐emitting diode emitting at 350 nm Electronics Letters boron light‐emitting diodes MOCVD optoelectronic devices secondary ion mass spectroscopy |
| title | BAlGaN light‐emitting diode emitting at 350 nm |
| title_full | BAlGaN light‐emitting diode emitting at 350 nm |
| title_fullStr | BAlGaN light‐emitting diode emitting at 350 nm |
| title_full_unstemmed | BAlGaN light‐emitting diode emitting at 350 nm |
| title_short | BAlGaN light‐emitting diode emitting at 350 nm |
| title_sort | balgan light emitting diode emitting at 350 nm |
| topic | boron light‐emitting diodes MOCVD optoelectronic devices secondary ion mass spectroscopy |
| url | https://doi.org/10.1049/ell2.12976 |
| work_keys_str_mv | AT petermilner balganlightemittingdiodeemittingat350nm AT vitalyzzubialevich balganlightemittingdiodeemittingat350nm AT thomasoconnor balganlightemittingdiodeemittingat350nm AT sandeepmsingh balganlightemittingdiodeemittingat350nm AT davindersingh balganlightemittingdiodeemittingat350nm AT briancorbett balganlightemittingdiodeemittingat350nm AT peterjparbrook balganlightemittingdiodeemittingat350nm |